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| TIP32 ... TIP32C TIP32 ... TIP32C PNP Version 2006-07-18 100.2 3 4 3.8 Type Typ General Purpose Silicon Power Transistors Silizium Leistungs-Transistoren fur universellen Einsatz Max. power dissipation with cooling Max. Verlustleistung mit Kuhlung Collector current Kollektorstrom Plastic case Kunststoffgehause Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen PNP 40 W 3A TO-220AB 2.2 g 15.7 123 13.2 1.5 0.9 2.54 Dimensions - Mae [mm] 1=B 2/4 = C 3=E Maximum ratings (TA = 25C) TIP32 Collector-Emitter-voltage Collector-Emitter-voltage Emitter-Base-voltage Power dissipation - Verlustleistung without cooling - ohne Kuhlung with cooling - mit Kuhlung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Base current - Basisstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur TA = 25C TC = 25C Ptot Ptot - IC - ICM - IB Tj TS B open E open C open - VCEO - VCES - VEBO 40 V 40 V 60 V 60 V 3.4 Grenzwerte (TA = 25C) TIP32A TIP32B 80 V 80 V 5V 2 W 1) 40 W 3A 5A 1A -55...+150C -55...+150C TIP32C 100 V 100 V Characteristics (Tj = 25C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis ) 2 Kennwerte (Tj = 25C) Typ. - - - - Max. - 50 1.2 V 1.8 V - VCE = 4 V, - IC = 1 A - VCE = 4 V, - IC = 3 A - IC = 3 A, - IB = 375 mA Base-Emitter voltage - Basis-Emitter-Spannung ) 2 hFE hFE - VCEsat - VBE 25 10 - - Collector-Emitter saturation volt. - Kollektor-Emitter-Sattigungsspg. 2) - VCE = 4 V, - IC = 3 A 1 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% http://www.diotec.com/ (c) Diotec Semiconductor AG 1 TIP32 ... TIP32C Characteristics (Tj = 25C) Min. Collector-Emitter cutoff current - Kollektor-Emitter-Reststrom - VCE = 30 V (B open) - VCE = 60 V (B open) - VCE = 40 V (B-E short) - VCE = 60 V (B-E short) - VCE = 80 V (B-E short) - VCE = 100 V (B-E short) Emitter-Base cutoff current - VEB = 5 V, (C open) Gain-Bandwidth Product - Transitfrequenz - VCE = 10 V, - IC = 0.5 A, f = 1 MHz Small signal current gain - Kleinsignal-Stromverstarkung - VCE = 10 V, - IC = 0.5 A, f = 1 kHz - VCE = 10 V, - IC = 0.5 A, f = 1 MHz Switching times - Schaltzeiten (between 10% and 90% levels) turn-on time turn-off time - ICon = 1 A - IBon = IBoff = 100 mA ton toff RthA RthC M4 - - 300 ns 1 s < 63 K/W 1) < 3 K/W 9 10% lb.in. 1 10% Nm TIP31 ... TIP31C - - hfe hfe 20 3 - - - - fT 3 MHz - - - IEB0 - - 1 mA TIP32 TIP32A TIP32B TIP32C TIP32 TIP32A TIP32B TIP32C - ICE0 - ICE0 - ICE0 - ICE0 - ICES - ICES - ICES - ICES - - - - - - - - - - - - - - - - 300 nA 300 nA 300 nA 300 nA 200 nA 200 nA 200 nA 200 nA Kennwerte (Tj = 25C) Typ. Max. Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Thermal resistance junction to case Warmewiderstand Sperrschicht - Gehause Admissible torque for mounting Zulassiges Anzugsdrehmoment Recommended complementary NPN transistors Empfohlene komplementare NPN-Transistoren 1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden http://www.diotec.com/ (c) Diotec Semiconductor AG 2 |
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